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Product Description
Stanford Microdevices' SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-4.0 GHz. The SLN-186 needs only 2 DC-blocking capacitors and a bias resistor for operation. Noise figure may be optimized by using 2-element matching at the input to yield <2.0dB noise figure. This 50 Ohm LNA requires only a single supply voltage and draws only 8mA. For broadband applications, it may be biased at 6mA with minimal effect on noise figure and gain. The SLN-186 is available in tape and reel at 1000, 3000 and 5000 devices per reel.
SLN-186
DC-4.0 GHz, 3.5 Volt 50 Ohm LNA MMIC Amplifier
Product Features * Patented, Reliable GaAs HBT Technology * Low Noise Figure: 2.0dB from 0.1 to 1.5 GHz * High Associated Gain: 22dB Typ. at 2.0 GHz * True 50 Ohm MMIC : No External Matching
Required
Noise Figure vs. Frequency
3
* Low Current Draw : Only 8mA * Low Cost Surface Mount Plastic Package Applications * AMPS, PCS, DECT, Handsets * Tri-Band & Broadband Receivers
Low Noise MMICs
2.5
6 mA
dB
2
8 mA
1.5 0.1
0.5
1
1.5
2
2.5
3
3.5
4
GHz
Electrical Specifications at Ta = 25C
S ym b ol P a r a m e t e r s : T e s t C o n d i t io n s U n its M in . Ty p . M ax.
NF 50 Ohm S 21 VSW R NF 50 Ohm S 21 VSW R
N o is e F ig u re in 5 0 O h m s : V d s = 3 .5 V, I d s = 8 m A 5 0 O h m G a in : V d s = 3 .5 V, I d s = 8 m A 5 0 O h m M a t c h (In p u t a n d O u tp u t) : V d s = 3 .5 V, I d s = 8 m A N o is e F ig u re in 5 0 O h m s : V d s = 3 .2 V, I d s = 6 m A 5 0 O h m G a in : V d s = 3 .2 V, I d s = 6 m A 5 0 O h m M a t c h (In p u t a n d O u tp u t) : V d s = 3 .2 V, I d s = 6 m A O u t p u t P o w e r a t 1 d B C o m p re s s io n : f = D C -1 .5 G H z T h ir d O r d e r In t e r c e p t P o in t: f = D C -1 .5 G H z
f = D C -1 .5 G H z f = 1 . 5 - 4 .0 G H z f = D C -1 .5 G H z f = 1 . 5 - 4 .0 G H z f = D C -1 .5 G H z f = 1 . 5 - 4 .0 G H z f = D C -1 .5 G H z f = 1 . 5 - 4 .0 G H z f = D C -1 .5 G H z f = 1 . 5 - 4 .0 G H z f = D C -1 .5 G H z f = 1 . 5 - 4 .0 G H z V d = 3 .5 V, Id = 8 m A V d = 3 .2 V, Id = 6 m A V d = 3 .5 V, Id = 8 m A V d = 3 .2 V, Id = 6 m A
dB dB dB dB dB dB dBm dBm dBm 14 19
2 .0 2 .4 22 20 1 .8 :1 3 .0 :1 2 .2 2 .6 17 16 1 .4 :1 2 .5 :1 -1 0 -1 2 +5 +3
2 .4
2 .5
P 1dB IP 3
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
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SLN-186 DC-4.0 GHz LNA MMIC Amplifier
Typical Performance at 25 C (Vds = 3.5V, Ids = 8mA)
|S11| vs. Frequency
0
30
|S21| vs. Frequency
25 8mA
-5
dB
-10
dB
20 6mA
-15
15
-20 0.1 0.5 1 1.5 2 2.5 3 3.5 4
10 0.1 0.5 1 1.5 2 2.5 3 3.5 4
GHz
GHz
|S12| vs. Frequency
0 0 -10 -10
|S22| vs. Frequency
dB
-20
dB
-20
-30
-30
-40 0.1 0.5 1 1.5 2 2.5 3 3.5 4
-40 0.1 0.5 1 1.5 2 2.5 3 3.5 4
Low Noise MMICs
.1 0 0 .2 5 0 .5 0 0 1 .0 0 1 .5 0 2 .0 0 2 .5 0 3 .0 0 3 .5 0 4 .0 0
GHz
GHz
Pout & TOIP vs. Frequency
12 8 4
TOIP
dBm
0 -4 -8 -12 -16 0.1 0.5 1 1.5 2 2.5 3 3.5 4
Pout
GHz
Typical S-Parameters Vds = 3.5V, Ids = 8mA
F re q G H z |S 11 | S 11 A n g |S 2 1 | S21 Ang |S 1 2 | S12 Ang |S 2 2 | S22 Ang
0 .0 9 2 0 .0 6 8 0 .0 6 7 0 .1 2 5 0 .2 1 5 0 .3 0 9 0 .4 2 3 0 .5 1 3 0 .5 0 9 0 .4 9 1
122 -1 5 4 -1 5 3 -1 6 0 152 90 36 8 -1 4 -2 0
11 .6 9 11 .9 9 1 2 .3 2 1 3 .0 3 1 4 .0 7 1 5 .11 1 5 .2 0 1 3 .1 8 1 0 .4 7 8 .8 9
-1 2 -4 -1 3 -3 9 -7 2 -1 3 8 -1 7 3 152 138 125
.0 8 0 .0 5 3 .0 4 2 .0 4 0 .0 4 8 .0 4 5 .0 5 6 .0 5 9 .0 6 1 .0 7 5
-11 5 16 29 45 31 14 14 17 20
.0 4 4 .0 8 9 .0 9 1 .1 2 3 .2 4 5 .3 9 4 .4 2 1 .4 4 5 .4 4 4 .4 6 8
35 -2 2 -4 6 -11 2 169 86 12 -2 6 -5 1 -7 1
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 30 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
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SLN-186 DC-4.0 GHz LNA MMIC Amplifier
Absolute Maximum Ratings
P a r a m ete r A b s o lu te M a xim u m
Part Number Ordering Information
Part Number Devices Per Reel Reel Size
SLN-186-TR1 SLN-186-TR2 SLN-186-TR3
1000 3000 5000
7" 13" 13"
D e vic e C urre nt Po w e r D issipa tion R F In p ut Po w er Ju n ction Te m p e ra ture O p e ra tin g Te m p e ra tu re Sto ra g e Te m pe ra tu re
50mA 4 4 0m W 1 0 0m W +2 0 0 C -4 5 C to +8 5 C -6 5 C to +1 5 0 C
Recommended Bias Resistor Values Supply Voltage(Vs) Rbias (Ohms) @ 8mA Rbias (Ohms) @ 6mA 3.3V * 5V 7.5V 9V 12V 15V
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
20V 2063
188
500
688
1063
1438
*
300
717
967
1467
1967
2800
* Needs active biasing for constant current source
Device Pinout
Pin 1 2 3 4 Function RF Input Ground RF Output and Bias Ground
Low Noise MMICs
Typical Biasing Configuration
Device Outline
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
4-11

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